View STB10N60M2_7309096.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. december 2013 docid024710 rev 2 1/24 24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 n-channel 600 v, 0.550 typ., 7.5 a mdmesh ii plus? low q g power mosfets in d2pak, dpak, to-220 and ipak packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. am15572v1 , tab to-220 1 2 3 tab 1 3 tab dpak 3 2 1 tab ipak 1 3 tab d pak 2 order codes v ds @ t jmax r ds(on) max i d STB10N60M2 650 v 0.600 7.5 a std10n60m2 stp10n60m2 stu10n60m2 table 1. device summary order codes marking package packaging STB10N60M2 10n60m2 d 2 pak tape and reel std10n60m2 dpak stp10n60m2 to-220 tube stu10n60m2 ipak www.st.com
contents STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 2/24 docid024710 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
docid024710 rev 2 3/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 7.5 a i d drain current (continuous) at t c = 100 c 4.9 a i dm (1) drain current (pulsed) 30 a p tot total dissipation at t c = 25 c 85 w dv/dt (1) 1. i sd 7.5 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (2) 2. v ds 480 v mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit d 2 pak dpak to-220 ipak r thj-case thermal resistance junction-case max 1.47 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 30 50 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 2.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 110 mj
electrical characteristics STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 4/24 docid024710 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 600 v i dss zero gate voltage drain current (v gs = 0) v ds = 600 v v ds = 600 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3 a 0.550 0.600 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 -400-pf c oss output capacitance - 22 - pf c rss reverse transfer capacitance -0.84-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 83 - pf r g intrinsic gate resistance f = 1 mhz open drain - 6.4 - q g total gate charge v dd = 480 v, i d = 7.5 a, v gs = 10 v (see figure 17 ) - 13.5 - nc q gs gate-source charge - 2.1 - nc q gd gate-drain charge - 7.2 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 3.75 a, r g = 4.7 , v gs = 10 v (see figure 16 and figure 21 ) -8.8-ns t r rise time - 8 - ns t d(off) turn-off delay time - 32.5 - ns t f fall time - 13.2 - ns
docid024710 rev 2 5/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 electrical characteristics table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 7.5 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 30 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 7.5 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 7.5 a, di/dt = 100 a/ s v dd = 60 v (see figure 18 ) - 270 ns q rr reverse recovery charge - 2 c i rrm reverse recovery current - 14.4 a t rr reverse recovery time i sd = 7.5 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 18 ) - 376 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 15 a
electrical characteristics STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 6/24 docid024710 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for dpak and ipak figure 3. thermal impedance for dpak and ipak i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15833v1 figure 4. safe operating area for d 2 pak and to-220 figure 5. thermal impedance for d 2 pak and to-220 i d 1 0.1 0.01 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse 10 am15834v1 figure 6. output characteristics figure 7. transfer characteristics i d 6 4 2 0 0 10 v ds (v) (a) 5 15 8 4v 5v 6v v gs =7, 8, 9, 10v 20 10 12 14 am15823v1 i d 4 0 0 4 v gs (v) 8 (a) 2 6 8 12 v ds =18v 14 10 2 6 10 am15824v1
docid024710 rev 2 7/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. normalized gate threshold voltage vs. temperature figure 12. normalized on-resistance vs temperature figure 13. source-drain diode forward characteristics v gs 6 4 2 0 0 q g (nc) (v) 2 8 10 v dd =480v 300 200 100 0 400 v ds 4 500 v ds (v) i d =7.5a 6 8 10 12 12 am15825v1 r ds(on) 0.56 0.55 0.54 0.53 2 i d (a) ( ) 1 3 0.57 4 5 v gs =10v 0.58 6 7 am15826v1 c 10 1 0.1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 100 1000 am15827v1 v gs(th) 0.8 0.7 t j (c) (norm) -50 0.9 -25 50 100 0 25 75 125 1.0 1.1 id=250 a am15828v1 r ds(on) 1.3 1.1 0.9 0.7 t j (c) (norm) 0.5 -50 -25 0 25 i d =3 a 50 75 100 125 1.5 1.7 1.9 2.1 2.3 2.5 am15829v1 v sd 0 2 i sd (a) (v) 1 5 3 4 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 6 7 1 1.2 1.4 am15830v1
electrical characteristics STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 8/24 docid024710 rev 2 figure 14. normalized v ds vs temperature figure 15. output capacitance stored energy v ds 0.99 0.97 0.95 0.93 t j (c) (norm) -50 1.01 i d =1ma -25 50 100 1.03 0 25 75 125 1.05 1.07 1.09 1.11 am15831v1 eoss 0 v ds (v) (j) 200 100 500 0 1 2 3 300 400 600 am15832v1
docid024710 rev 2 9/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 test circuits 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 10/24 docid024710 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024710 rev 2 11/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 package mechanical data table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 12/24 docid024710 rev 2 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3.50 5.08 1.60 footprint
docid024710 rev 2 13/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 package mechanical data table 10. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 14/24 docid024710 rev 2 figure 24. dpak (to-252) type a drawing 0068772_m_type_a
docid024710 rev 2 15/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 package mechanical data figure 25. dpak (to-252) type a footprint (b) b. all dimensions are in millimeters footprint_rev_m_type_a
package mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 16/24 docid024710 rev 2 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid024710 rev 2 17/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 package mechanical data figure 26. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 18/24 docid024710 rev 2 table 12. ipak (to-251) mechanical data dim mm. min. typ. max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.30 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e 2.28 e1 4.40 4.60 h 16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10
docid024710 rev 2 19/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 package mechanical data figure 27. ipak (to-251) drawing 0068771_k
packaging mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 20/24 docid024710 rev 2 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
docid024710 rev 2 21/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 packaging mechanical data table 14. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
packaging mechanical data STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 22/24 docid024710 rev 2 figure 28. tape for d 2 pak (to-263) and dpak (to-252) figure 29. reel or d 2 pak (to-263) and dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
docid024710 rev 2 23/24 STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 revision history 6 revision history table 15. document revision history date revision changes 29-may-2013 1 first release. 06-dec-2013 2 ? added: d 2 pak package ? modified: title and r ds(on) values in cover page ? modified: r ds(on) values in table 5 ? modified: r g value in table 6 ? modified: figure 9 and i d value in figure 12 ? added: table 9 , 13 , figure 22 and 23 ? updated: table 10 , 11 , figure 24 , 25 and 26 ? minor text changes
STB10N60M2, std10n60m2, stp10n60m2, stu10n60m2 24/24 docid024710 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STB10N60M2

	To Download STB10N60M2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .